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Nexperia PSC20120x Silicon Carbide (SiC) Schottky Diodes

Nexperia PSC20120x Silicon Carbide (SiC) Schottky Diodes are designed for ultra-high performance, low-loss, high-efficiency power conversion applications. The devices feature temperature-independent capacitive turn-off, zero recovery switching behavior, and an excellent figure-of-merit (QC x VF).

The PSC20120L is encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package, while the PSC20120J is housed in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package.

The Nexperia PSC20120x Merged PiN Schottky (MPS) diode enhances the robustness defined in a high IFSM.

Features

  • Zero forward and reverse recovery
  • Temperature-independent fast and smooth switching performance
  • Outstanding figure of merit (Qc x VF)
  • High IFSM capability
  • High power density
  • Reduced system costs
  • System miniaturization
  • Reduced EMI
  • Packages
    • PSC20120L
      • TO-247-2 heatsink mounted, 1 mounting hole; 2-leads; 10.88mm pitch; 20.95mm x 15.94mm x 5.02mm body
    • PSC20120J
      • D2PAK configuration; 5.08mm pitch; 8.8mm x 10.35mm x 4.46mm body

Applications

  • Switch Mode Power Supply (SMPS)
  • AC-DC and DC-DC converter
  • Battery charging infrastructure
  • Server and telecom power supply
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic inverters

Specifications

  • 20A forward current
  • 1200V DC blocking voltage
  • 82nC total capacitive charge

Additional Resources

Package Styles

Application Circuit Diagram - Nexperia PSC20120x Silicon Carbide (SiC) Schottky Diodes
Publicado: 2025-08-16 | Actualizado: 2025-08-16