IDDD10G65C6XTMA1

Infineon Technologies
726-IDDD10G65C6XTMA1
IDDD10G65C6XTMA1

Fabricante:

Descripción:
Diodos Schottky de SiC SIC DIODES

Modelo ECAD:
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En existencias: 8,448

Existencias:
8,448
Se puede enviar inmediatamente
En pedido:
3,400
Plazo de entrega de fábrica:
8
Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$4.08 $4.08
$3.00 $30.00
$2.42 $242.00
$2.37 $1,185.00
Envase tipo carrete completo (pedir en múltiplos de 1700)
$2.37 $4,029.00

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Diodos Schottky de SiC
RoHS:  
SMD/SMT
HDSOP-10
Single
29 A
650 V
1.25 V
55 A
1 uA
- 55 C
+ 175 C
XDDD10G65
Reel
Cut Tape
Marca: Infineon Technologies
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: AT
Dp - Disipación de potencia : 105 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 1700
Subcategoría: Diodes & Rectifiers
Nombre comercial: CoolSiC
Vr - Tensión inversa: 650 V
Alias de las piezas n.º: IDDD10G65C6 SP001679790
Peso de la unidad: 760.160 mg
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Atributos seleccionados: 0

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MXHTS:
8541100101
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolSiC™ 650V Schottky 6th Generation Diodes

Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology, and a novel Schottky metal system. The design of this Infineon series results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC Generation 6 complements the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.